Can GaN RF and Millimeter-Wave Technology Be Linear and Efficient? 🗓

— Recent changes in GaN RF and mm-wave technology for linearity and efficiency.

Meeting
Newbury Park, California Map

IEEE BUENAVENTURA ED/CAS CHAPTER
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Meeting Date: July 23, 2019
Time: 6:30 PM Networking & Food; 7:00 PM Presentation
Speaker: Dr. Jeong-Sun Moon of HRL Laboratories, LLC
Location: Newbury Park, California
Cost: none
RSVP: requested, through website
Event Details: IEEE vTools

Summary:
RF communications utilizes complex modulation schemes that require amplifier linearity. As amplifier operating frequency moves into the millimeter wave (mm-wave) range, the power added efficiency becomes also important to save the system prime power. As for 5G applications, high efficiency and linearity of amplifiers are required to support complex waveforms with high peak-to-average ratio (PAPR) and large instantaneous bandwidth. Recently, CMOS-based 28 GHz power amplifiers demonstrated 40% peak power-added efficiency (PAE) at 18.9 dBm saturated output power using 45 nm n-type CMOS SOI technology.

GaN HEMTs have a high breakdown voltage that offers high output impedance and power density per input capacitance over GaAs PHEMTs or CMOS. Thus, over the last decade, various GaN RF amplifiers are utilized for both commercial and defense applications. In this talk, we will present recent change in GaN RF and mm-wave technology for linearity and efficiency.

Bio:
Dr. Jeong-Sun Moon is a Fellow of IEEE and Senior Scientist at HRL Laboratories, Malibu, CA, currently serving as an Editor of a top-notch IEEE journal, Electron Device Letters. He has been with HRL since 2000 and has been a PI for numerous contracts from DARPA, ONR, NRO, JPL and NASA. He received 2014 George Abraham Outstanding Paper Award from Government Microcircuit Applications and Critical Technology Conference (GOMACTech), and NASA SPACE ACT Board Award in 2009. He received his Ph.D. in physics from Michigan State University, East Lansing, MI, in 1995 in the area of nano/quantum devices and digital signal processing (DSP). With nanoscale devices, he studied electron and spin quantum transport and its 1/f noise in nanoscale. Using DSP, he developed a complete software-defined programmable digital transceiver/spectrum analyzer in C/Assembly in 1992. Before HRL, he worked at Sandia National Laboratories, where he worked on III-V semiconductor nanoscale devices such as first 2D-2D resonant tunneling transistors. At HRL, his research focuses on emerging materials, novel high-speed devices, and applications toward RF circuits, using GaN, InP, GaSb, SiGe, Graphene, and phase-change material, as well as optical devices. He has published two book chapters and has authored or co-authored more than 100 papers and holds 20 patents. He also gave numerous invited conference and workshop presentations and tutorials/ short courses. His work was featured in various magazines including IEEE Spectrum, Compound Semiconductor, NASA Tech Briefs, Microwave Journal, and MIT Technology Review. He served on the Program Committee for the Device Research Conference. He is a member of Technical Program Committee in Microwave Theory and Techniques Society (MTT-S).