THz Transistors and Their Applications 🗓

– InP HEMT capabilities at Northrop Grumman

Meeting
Newbury Park Map

IEEE Buenaventura Microwave Theory and Techniques Society Chapter
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Meeting Date: January 21, 2020
Time: 6:30 PM Networking & Food; 7:00 PM Presentation
Speaker: Dr. Bill Deal
Location: Newbury Park
Cost: none
RSVP: requested, through website
Event Details: IEEE vTools

Summary:
Transistors fabricated in the Indium Phosphide (InP) material systems have proven capable of reaching fMAX greater than 1 THz. This talk describes InP HEMT capabilities at Northrop Grumman. The talk starts with a technology overview, and then describes different applications at submillimeter and THz frequencies. The talk completes with an overview of MMIC, component and sub-system results at these frequencies.
About the Speaker

Bio:
Dr. Bill Deal is a Consulting Engineer at Northrop Grumman, where he leads the development of high frequency electronics. His group is involved with state of the art low noise transistor development, and is currently developing receivers to as high as 850 GHz for a variety of applications. Dr. Deal is a Fellow of the IEEE, and has published more than 150 conference and journal papers.